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1

Inculturation and Syncretism: What is the Real Issue?

Journal:

International Bulletin of Mission Research

Year:

1992

Language:

english

File:

PDF, 209 KB

english, 1992

2

Inculturation: A Difficult and Delicate Task

Journal:

International Bulletin of Mission Research

Year:

1996

Language:

english

File:

PDF, 403 KB

english, 1996

3

Christ and Church: A Spectrum of Views

Schineller, J. P.

Journal:

Theological Studies

Year:

1976

Language:

english

File:

PDF, 1.62 MB

english, 1976

4

Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode

B Schineller, Y Junas, M Heuken, K Heime

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 1.22 MB

english, 1998

5

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

M. Marso, P. Javorka, Y. Dikme, H. Kalisch, J. Bernát, C. Schäfer, B. Schineller, A. v. d. Hart, M. Wolter, A. Fox, R. H. Jansen, M. Heuken, P. Kordoš, H. Lüth

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 81 KB

english, 2003

6

GaAs MMIC's for digital radio frequency memory (DRFM) subsystems

Lewis, G.K., Bahl, I.J., Griffin, E.L., Schineller, E.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.12 MB

english, 1987

7

GaAs MMIC's for Digital Radio Frequency Memory (DRFM) Subsystems

Lewis, G.K., Bahl, I.J., Griffin, E.L., Schineller, E.R.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

1987

Language:

english

File:

PDF, 1.37 MB

english, 1987

8

[IEEE IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers. - New York, NY, USA (24-25 May 1988)] IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers. - GaAs MMIC slotline/CPW quadrature IF upconverter

Lewis, G.K., Bahl, I.J., Geissberger, A.E., Schineller, E.R.

Year:

1988

File:

PDF, 221 KB

1988

9

Influence of UV Light-Assisted Annealing on Optical Properties of InGaN/GaN Heterostructures Grown by MOVPE

I.P. Marko, E.V. Lutsenko, V.N. Pavlovskii, G.P. Yablonskii, O. Schön, H. Protzmann, M. Lünenbürger, M. Heuken, B. Schineller, K. Heime

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 173 KB

english, 1999

10

Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE

B. Schineller, P.H. Lim, O. Schön, H. Protzmann, M. Heuken, K. Heime

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

11

Investigation of Defect Levels in Mg-Doped GaN Schottky Structures by Thermal Admittance Spectroscopy

N.D. Nguyen, M. Germain, M. Schmeits, B. Schineller, M. Heuken

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 119 KB

english, 2001

12

Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE

A.L. Gurskii, I.P. Marko, E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich, G.P. Yablonskii, B. Schineller, O. Schön, M. Heuken

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 109 KB

english, 2001

13

Exciton Diffusion in GaN Epitaxial Layers

Yu. Rakovich, J.F. Donegan, A. Gladyshchuk, G. Yablonskii, B. Schineller, M. Heuken

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 78 KB

english, 2001

14

MOVPE Growth Optimization Using Computer Supported Design of Experiments (DoE)

A. Alam, O. Schön, B. Schineller, M. Heuken, H. Jürgensen

Journal:

physica status solidi (a)

Year:

2000

Language:

english

File:

PDF, 107 KB

english, 2000

15

Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450–470 nm

G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii, I.P. Marko, A.L. Gurskii, V.Z. Zubialevich, O. Schön, H. Protzmann, M. Lünenbürger, B. Schineller, M. Heuken

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 94 KB

english, 2001

16

Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures

G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich, A.L. Gurskii, H. Kalisch, A. Szymakowskii, R.A. Jansen, A. Alam, Y. Dikme, B. Schineller, M. Heuken

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 103 KB

english, 2002

17

ChemInform Abstract: Chemical Synthesis of Bacterial Autoinducers and Analogues

Anatol Eberhard, Jeffrey B. Schineller

Journal:

Year:

2001

File:

PDF, 24 KB

2001

18

Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates

A.L. Gurskii, V.N. Pavlovskii, E.V. Lutsenko, V.Z. Zubialevich, G.P. Yablonskii, H. Kalisch, A. Szymakowski, R.H. Jansen, A. Alam, B. Schineller, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 230 KB

english, 2005

19

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

G.P. Yablonskii, A.L. Gurskii, V.N. Pavlovskii, E.V. Lutsenko, V.Z. Zubialevich, T.S. Shulga, A.I. Stognij, H. Kalisch, A. Szymakowski, R.H. Jansen, A. Alam, B. Schineller, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 219 KB

english, 2005

20

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

C. Hemmingsson, P.P. Paskov, G. Pozina, M. Heuken, B. Schineller, B. Monemar

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 463 KB

english, 2007

21

Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor

C. Hemmingsson, G. Pozina, M. Heuken, B. Schineller, B. Monemar

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 398 KB

english, 2008

22

Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor

C. Hemmingsson, P.P. Paskov, G. Pozina, M. Heuken, B. Schineller, B. Monemar

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 889 KB

english, 2006

23

Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates

E.V. Lutsenko, A.V. Danilchyk, N.P. Tarasuk, V.N. Pavlovskii, A.L. Gurskii, G.P. Yablonskii, L. Rahimzadeh Khoshroo, H. Kalisch, R.H. Jansen, Y. Dikme, B. Schineller, M. Heuken

Journal:

Superlattices and Microstructures

Year:

2007

Language:

english

File:

PDF, 746 KB

english, 2007

24

Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers

N.D. Nguyen, M. Germain, M. Schmeits, R. Evrard, B. Schineller, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 161 KB

english, 2001

25

Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN

Schön, O, Schineller, B, Heuken, M, Beccard, R

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 164 KB

english, 1998

26

Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE

Schineller, B, Guttzeit, A, Vertommen, F, Schön, O, Heuken, M, Heime, K, Beccard, R

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 150 KB

english, 1998

27

The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

B Schineller, A Guttzeit, P.H Lim, M Schwambera, K Heime, O Schön, M Heuken

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

28

High quality III-nitride material grown in mass production MOCVD systems

O. Schoen, M. Schwambera, B. Schineller, D. Schmitz, M. Heuken, H. Juergensen

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 279 KB

english, 1998

29

Investigation of GaInN films and development of double-hetero (DH) structures for blue and green light emitters

M Schwambera, O Schoen, B Schineller, D Schmitz, M Heuken

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 399 KB

english, 1999

30

Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

P.H Lim, B Schineller, O Schön, K Heime, M Heuken

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 253 KB

english, 1999

31

Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors®

R. Beccard, H. Protzmann, M. Luenenbuerger, B. Schineller, M. Heuken

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 193 KB

english, 2001

32

Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation

G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii, I.P. Marko, B. Schineller, M. Heuken, K. Heime

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 232 KB

english, 2001

33

Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE

A.L Gurskii, E.V Lutsenko, G.P Yablonskii, H Hamadeh, H Kalisch, B Schineller, M Heuken

Journal:

Materials Science and Engineering: B

Year:

1998

Language:

english

File:

PDF, 157 KB

english, 1998

34

Regeneration of catalytic activity of glutamine synthetase mutants by chemical activation: Exploration of the role of arginines 339 and 359 in activity

Adil M. Dhalla, Bin Li, Murtaza F. Alibhai, Kenneth J. Yost, Jens M. Hemmingsen, William M. Atkins, Jeffrey Schineller, Joseph J. Villafranca

Journal:

Protein Science

Year:

1994

Language:

english

File:

PDF, 645 KB

english, 1994

35

Influence of pumping and inherent laser light on properties and degradation of ZnMgSSe/ZnSe quantum well heterostructures

E. V. Lutsenko, G. P. Yablonskii, V. N. Pavlovskii, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, K. Heime, R. H. Jansen, T. Walther, B. Schineller, M. Heuken

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 278 KB

english, 2003

36

Growth, Stimulated Emission, Photo- and Electroluminescence of InGaN/GaN EL-Test Heterostructures

E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich, A.I. Stognij, A.L. Gurskii, V.A. Hryshanau, A.S. Shulenkov, G.P. Yablonskii, O. Schön, H. Protzmann, M. Lünenbürger, B. Schineller, Y. Dikme, R.H. Jan

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 134 KB

english, 2003

37

Electrical Characterization of InGaN/GaN Multiple-Quantum-Well Structures by Thermal Admittance Spectroscopy

N.D. Nguyen, M. Schmeits, M. Germain, B. Schineller, M. Heuken

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

38

Luminescence Properties of Strained GaN Epilayers and Spatial Configurations of Silicon Impurity and Related Defects

A.L. Gurskii, E.V. Lutsenko, V.M. Zelenkovskii, T.V. Bezjazychnaja, V.N. Pavlovskii, V.Z. Zubialevich, B. Schineller, O. Schön, G.P. Yablonskii, M. Heuken

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 368 KB

english, 2003

39

Study of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers

A.G. Ryabtsev, E.V. Lutsenko, G.I. Ryabtsev, G.P. Yablonskii, A.S. Smal, B. Schineller, M. Heuken

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 78 KB

english, 2003

40

Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique

A. L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, G. P. Yablonskii, R. Aleksiejūnas, K. Jarašiūnas, F. Letertre, B. Faure, B. Schineller, A. Alam, M. Heuken, Y. Dikme, H. Kalisch, R.

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 175 KB

english, 2005

41

Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques

E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, B. Schineller, M. Heuken

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 287 KB

english, 2006

42

Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si

E. V. Lutsenko, A. V. Danilchyk, N. P. Tarasuk, A. V. Andryieuski, V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, H. Kalisch, R. H. Jansen, Y. Dikme, B. Schineller, M. Heuken

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 437 KB

english, 2008

43

GaN boules grown by high rate HVPE

E. Richter, M. Gründer, B. Schineller, F. Brunner, U. Zeimer, C. Netzel, M. Weyers, G. Tränkle

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 252 KB

english, 2011

44

Analogs of the autoinducer of bioluminescence inVibrio fischer

Anatol Eberhard, Cindra A. Widrig, Paula McBath, Jeffrey B. Schineller

Journal:

Archives of Microbiology

Year:

1986

Language:

english

File:

PDF, 594 KB

english, 1986

45

Recent advances in MOCVD process technology for the growth of compound semiconductor devices

B. Schineller, M. Heuken

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 616 KB

english, 2007

46

Characterization of undoped and silicon-doped InGaN/GaN single quantum wells

B. Schineller, P. H. Lim, G. P. Yablonskii, E. V. Lutsenko, O. Schön, H. Protzmann, M. Heuken, K. Heime

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 172 KB

english, 2000

47

MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters

M. Heuken, C. V. Eichel-Streiber, A. Behres, B. Schineller, K. Heime, C. Mendorf, G. Brockt, H. Lakner

Journal:

Journal of Electronic Materials

Year:

1997

Language:

english

File:

PDF, 814 KB

english, 1997

48

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

G. P. Yablonskii, A. L. Gurskii, E. V. Lutsenko, I. P. Marko, B. Schineller, A. Guttzeit, O. Schön, M. Heuken, K. Heime, R. Beccard, D. Schmitz, H. Juergensen

Journal:

Journal of Electronic Materials

Year:

1998

Language:

english

File:

PDF, 232 KB

english, 1998

49

Important aspects for the mass production of GaN-based quantum devices grown by MOCVD

J. Soellner, O. Schoen, A. Alam, B. Schineller, J. Kaeppeler, M. Heuken

Journal:

Thin Solid Films

Year:

2007

Language:

english

File:

PDF, 373 KB

english, 2007

50

MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications

D. Keiper, P. Velling, A. Brennemann, M. Agethen, C. van den Berg, R.M. Bertenburg, B. Schineller, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 141 KB

english, 2003

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